Damascene Cu : Dielectric Nitride Capping Surface Plasma Treatment Optimization for Flash Memory Devices ISSM Paper: PO-O-068

This paper discusses the integrated NH3 plasma treatment (PT) windowing along with the Cu and dielectric capping layer process windowing on 90 and 65nm Flash Memory. Results are presented on in-fab defect observations; the material properties as measured by SIMS, g-FTIR, AFM and TEM; the electrical affects on Cu metal sheet rho, leakage and VRDB; the experimental sort bins; and the backend pack- age memory device reliability measures on electromigration, stress migration, charge loss/charge gain, HTOL and data retention bake. The results demonstrate a viable insitu NH3 plasma treatment process within the dielectric capping layer process for memory product applications that meet wireless, consumer and automotive industry product specifications.