Chemical beam epitaxy of InP/InGaAsP: current status and future prospects

Chemical beam epitaxy (CBE) is a high vacuum crystal growth technique which employs gaseous sources in the molecular flow regime. As such, it seeks to combine the chief advantages of both MOVPE and MBE. Gaseous sources offer the prospect of flexible, reproducible flux control, whilst molecular beams provide the capacity for sharp interfaces and high lateral uniformity. The author assesses the extent to which the potential of CBE has been realised in the growth of InP/InGaAsP. >