Semiconductor thin film, method for producing same, thin film transistor and active-matrix-driven display panel

Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, it does not decrease the luminance of a display when overlapped with the pixel portion in case where the semiconductor thin film is used as a switching device for driving the display. Specifically disclosed is a transparent semiconductor thin film (40) produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10 cm or less, a hole mobility of 2 cm /Vsec or more, and an energy band gap of 2.4 EV or more.