Measurements of pulse-height defect in AuSi detectors for H, He, C, N, O, Ne, Ar, Kr from ≈2 to ≈ 400 keV/nucleon

Abstract We report measurements of pulse-height defects in Si surface-barrier detectors for a variety of ions and energies. We find: (a) for ions up to Ne our measurements agree remarkably well with calculations based on energy loss and nuclear defect theory, (b) for heavier ions we find systematic deviations, (c) there is no evidence of a dead layer at the SiAu interface, and (d) our measurements are consistently reproducible for detectors fabricated in our laboratory.