Silicon carbide epitaxial layer doped region method

A silicon carbide epitaxial layer doped region, comprising: taking a silicon carbide substrate, and cleaned; surface of the epitaxial substrate, a first intrinsic silicon layer; etching the intrinsic silicon layer in the first forming a first patterned silicon layer, etching depth reaches the surface of the substrate; raising the temperature of the first intrinsic silicon layer melts, into a carbon source, while the source into a first type dopant, the first pattern melted type silicon layer forming a first doped silicon carbide, the substrate is formed; at low temperature into the silicon source, a second intrinsic silicon layer grown on a substrate; etching of the first type doped silicon carbide two intrinsic silicon layer etched away, the etching depth reaches the surface of the first-type doped silicon carbide, silicon layer to form a second pattern; patterning raising the temperature of the second silicon layer is melted, introduced into a carbon source, while type dopant into the second source, the melted second patterned second silicon layer doped silicon carbide layer; etching silicon residues, having a first complete to give the desired second type doping type silicon carbide regions the epitaxial layer, the preparation is completed.