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Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale nand Flash Me
Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale nand Flash Me
2008
Christian Monzio Compagnoni
Riccardo Gusmeroli
Alessandro S. Spinelli
Angelo Visconti
Keywords:
Semiconductor device modeling
NAND gate
Electronic engineering
Nanoscopic scale
Charge trap flash
Electron
Threshold voltage
Analytical chemistry
Flash memory
Physics
Correction
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