A 3.3 V-only 16 Mb DINOR flash memory

A 3.3 V only, block erasable 16 Mb divided bit-line NOR-DINOR flash memory has 47 ns random access time and 1 MB programming throughput. Power consumption in program operation is 60 mW. This memory is fabricated using a 0.5 /spl mu/m design-rule, double-layer aluminum, triple-layer polysilicon, triple-well CMOS. The effective memory cell is 1.4/spl times/1.35 /spl mu/m/sup 2/. 256B page buffer, optimized source/drain memory cell structure and efficient charge pump result in high speed, low power consumption, and low cost.