Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

A ferroelectric tunnelling heterostructure is presented in which both the height and the width of the tunnelling barrier can be electrically modulated, leading to a greatly enhanced tunnelling electroresistance. In Pt/BaTiO3/Nb:SrTiO3 heterostructures, an ON/OFF conductance ratio that is about an order of magnitude greater than those reported in normal ferroelectric tunnelling junctions, is demonstrated at room temperature.