Dielectric properties of Ti substituted Bi2−xTixO3+x/2 ceramics

Abstract (1− x )Bi 2 O 3 ( x )TiO 2 ( x =0.05, 0.10, 0.15) materials were prepared by a conventional solid-state reaction technique. Dielectric properties of the materials were investigated using an LCR meter in the frequency range 20–10 6  Hz over the temperature range 100–500 °C. Both dielectric constant and loss tangent decreased with increasing Ti content in the present system. It was observed that dielectric relaxation peaks shift to a higher frequency with increasing temperature. Using the electric modulus equations, the relaxation process was evaluated and a parameter α (0≤ α x =0.05 due to its smaller grains and presence of higher defects.