High-Performance Optical Gating in Junction Device based on Vanadium Dioxide Thin Film Grown by Sol-Gel Method

In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide (VO 2 ) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the VO 2 film of the device with an infrared light at ~1554.6 ㎚. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 ㎽ resulting in a tuning efficiency of ~1.930 %/㎽, which was ~4.9 times as large as that obtained in the previous device fabricated using the VO 2 thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ㎳ and ~200 ㎳, respectively, which were ~20 times as rapid as those obtained in the previous device.