Plasma enhanced chemical vapor deposition ultralow dielectric constant films using triethoxymethylsilane and limonene as precursors

Ultralow dielectric-constant (κ) porous SiCO(H) films were prepared using C 7 H 18 O 3 Si (MTES) and C 10 H 16 (LIMO) precursors by plasma enhanced chemical vapor deposition (PECVD) and post-deposition annealing. This paper well demonstrated the effect of LIMO/MTES flow rate ratio on the performance of the SiCO(H) film. When the flow rate ratio was 1.5, the SiCO(H) films exhibited the lowest κ value of 2.2 and extremely low leakage current density of 5.3×10 −9 A/cm 2 at 1 MV/cm, Young's modulus of 4.23 GPa, and hardness of 0.55 GPa after annealing at 420°C for 4 h in N 2 ambient.