The Effect of the Circuit Connection on the Characteristic of a Three-Collector Magnetotransistor

The sensitivity and initial voltage offset between the collectors of a two-collector lateral bipolar npn-type magnetotransistor with a base formed in the well, which serves as the third collector, are investigated experimentally. It is shown that the voltage magnetosensitivity reaches 11 V/T in a circuit with a common bias of the base and the well, and that one can obtain an initial voltage offset between the collectors of less than 1 mV.