Stability of reactive DC-sputtered Ir and IrO2 thin films in various ambients

Abstract Ir and IrO2 are potential electrode materials for ferroelectric thin film capacitors. However, some process related issues need to be considered before integrating ferroelectric capacitors into memory cells. This paper presents the effects of post-deposition annealing on the characteristics of DC-magnetron sputtered Ir and IrO2 thin films. Film properties such as composition, resistivity, crystallinity, adhesion, and microstructure were examined before and after annealing.