A process for producing a silicon wafer for depositing an epitaxial layer and epitaxial wafer

A process for producing a silicon wafer for depositing an epitaxial layer on the assumption that a pulling speed V (mm / min) and a temperature gradient in the axial direction of the ingot G (° C / mm) in a temperature range from the melting point of silicon to 1300 ° C is comprising the steps of: Pulling a silicon single reference ingot from a molten silicon liquid, under the condition that it is doped in the amount of in the reference ingot boron at a density of 4 × 10 In slicing the reference ingot in the axial direction. to obtain a predetermined critical ratio of V / G, where in the middle part of the reference ingot, an oxidation-induced stacking fault disappears when the reference ingot in a temperature range of 1000 ° C ± 30 ° C for 2 to 5 hours and then in a temperature range of 1130 ° C ± 30 ° C for 1 to 16 hours in an oxygen atmosphere is heat treated, Pulling a silicon ingot from a molten ...