Thin -film transistors based on Zinc Oxide channel layer and Molybdenum doped Indium Oxide transparent electrodes

Thin-film transistors (TFT) were fabricated at room-temperature (RT) utilizing zinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. The common bottom-gate TFTs were fabricated on commercially available thermal silicon oxide (100 nm thick) coated silicon wafers. A total of 100 devices were made in a 1 inch square area as 10 × 10 matrix, by varying the channel width and length, between 5 µm and 300 µm. Output and transfer characteristics of the fabricated devices were extracted from a semiconductor parameter analyzer. A threshold voltage ( V Th ) of 10 V and an I ON / I OFF ratio of 1 × 10 -5 were obtained. The impact of channel dimensions on the device performance was investigated, confirming that the saturation current ( I sat ) is directly proportional to the channel width ( W ), and inversely proportional to channel length ( L ), in agreement with field effect device theory.