Temperature behaviour of the substrate surface during growth of nanocrystalline silicon carbide films by deposition of 120 eV carbon and silicon ions

Abstract Changes in the temperature of nanocrystalline SiC film surface were measured during film growth by direct deposition of carbon and silicon ions onto substrates at ∼800 °С. It has been found that the initial stage of the film growth is characterized by uncontrolled variations of the surface temperature, which are observed for constant values of the deposition parameters. The energy components of the temperature balance on the film surface during its growth under conditions of direct ion deposition are analyzed. It is shown that magnitudes of temperature variations depend on the energy and current density of the deposited ions and on the ratio of the emissivity coefficients of the substrate material and silicon carbide. If this ratio is 1:6, the temperature rise at the initial growth stage reaches 160 °С when using 120 eV ion energy. For ion deposition onto silicon carbide substrates these uncontrolled temperature deviations at the initial stage of film growth were not observed.