Etch Process Optimization and Electrical Improvement in TiN Hard Mask Ultra-Low K Interconnection

As critical dimensions decrease, key dimension-related dielectric etch challenges emerge, including via and trench uniformity and etch depth profile. The transition to ultra-low-k films such as BDIII (Black Diamond; k=2.55) dielectrics requires consideration of film sensitivity to compositional modification, polymer interactions at pores, and the effect of diffusion. Use of N 2 /O 2 plasma at 60 ˚C to modify the M1 trench profile has been demonstrated to lower the RC delay by 14% as compared to traditional CO 2 plasmas at 60˚C. Use of a DHF solution to clean the etching residue in the dual damascene structure results in >97% yield with a tight range of via chain resistance.