A study of amorphous Si:H:F alloys using MIS tunnel junctions

The effect of fluorine inclusion on the amorphous silicon‐hydrogen alloys is studied by the measurements of G‐V and C‐V characteristics of MIS devices where S is such an alloy. It is found that fluorine is either eliminating deep gap states or adding new donor states, but there is no evidence for elimination of states closer than 0.2 eV to the band edges. The inclusion of fluorine does not significantly change the resistinity or the activation energy (102 Ωcm and ∠0.2 eV) of amorphous films heavily doped with phosphorus. The very low values for the resistivity and the activation energy (≲10−1 Ωcm and 0.02 eV) reported for silicon‐hydrogen‐fluorine alloys are associated with the crystallization of these alloys.