Crystal orientation dependence of p-type contact resistance of GaN

Abstract The crystal orientation dependence in the p-type contact resistance of wurtzite GaN is theoretically investigated by considering the k -directional dependence of hole effective masses for the first time. The current–voltage characteristics of a metal–GaN junction has been calculated by using the so-called tunnelling model which includes both heavy- and light-hole transports. The obtained result suggests that the p-type contact resistance will be reduced when [1 0 1 0] and [0 1 0 0] faces are properly used for contact interfaces.