A multivariable turn-on/turn-off switching loss scaling approach for high-voltage GaN HEMTs in a hard-switching half-bridge configuration

Efficiency evaluation is critical in modern power converter design. For hard-switching converters, the E on /E off is the key to calculating switching losses. Although some datasheets provide the E on /E off curves, the data generated are usually under a typical operating condition. In this paper, the switching loss distribution for GaN HEMTs is summarized. A simple and practical step-by-step E on /E off scaling method for GaN HEMTs is provided so that researchers and engineers can obtain other E on /E off data under different operating voltages, junction temperatures, and external gate resistors by quickly scaling the given E on /E off data with relatively high accuracy. To confirm the effectiveness of the proposed scaling method, a double-pulse testing setup with closed-loop temperature control has been built. The experimental results are compared with the calculated results to verify the proposed method.