Memory characteristics and mechanisms in transistor-based memories

Abstract Transistor-based memories (TBMs) are the indispensable component of next-generation electronic systems. For nonvolatile information storage, TBMs with different mechanisms such as floating-gate, charge-trapping, and ferroelectric gating have been developed. Recently, potential applications of TBMs to flexible electronics are also investigated. In this chapter, electronic characteristics and working mechanisms of the above mentioned TBMs are discussed. Prospective research directions of this research field are also elucidated.