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Understanding the effects of off-state and hard-switching stress in GaN-based power transistors
Understanding the effects of off-state and hard-switching stress in GaN-based power transistors
2020
Nicola Modolo
Carlo De Santi
Andrea Minetto
Luca Sayadi
Sebastien Sicre
Gerhard Prechtl
Gaudenzio Meneghesso
Enrico Zanoni
Matteo Meneghini
Keywords:
Engineering physics
Power semiconductor device
Materials science
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