Multiwavelength InGaAs/InGaAsP strained-layer MQW-laser array using shadow-masked growth

A simple technique for fabricating multiwavelength laser arrays is presented. The lateral variations in bandgap (or emission wavelength) between the different lasers are obtained by the use of shadow-masked growth. The shadow masked growth results in variations in thickness (and to a lesser extent, in composition) over the substrate. In combination with a multiquantum well (MQW) active region, this gives the required bandgap variations. By varying the window width in the shadow mask between 10 mu m and >500 mu m it was possible to obtain a wavelength span of 130 nm centered around 1.55 mu m. The strained-layer-ridge MQW Fabry-Perot lasers showed a constant threshold current (around 70 mA for an 11- mu m*500- mu m stripe). >