Growth and characterization of GaAs and AlGaAs with MBE growth temperature

GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to and the /Ga ratios from 17 to 22. In the samples with the growth rates of the ranges of , the impurity concentrations were in the ranges of with the Hall mobilities of . In the Si-doped GaAs, the n-type GaAs layers with low electro trap, only two hole deep levels were observed with uniform doping profiles (. 8 deep level defects were observed between 0.17~0.85eV in undoped AlGaAs layers.