Comparative Study of C-V and Transconductance of a Si δ-Doped GaAs FET Structure

Anomalous peaks/dips have been found in the transconductance vs gate voltage characteristics of a Si ?-doped GaAs FET (Field Effect Transistor) at 4.2 K. Comparing the characteristics with the C-V concentration as a function of the gate voltage, the origin of the oscillatory behaviour is attributed to the intersubband scattering in the ?-doped layer.