Preparation method of silicon-based photoelectron system
2015
An embodiment of the invention discloses a preparation method of a silicon-based photoelectron system. The preparation method is characterized in that: the silicon-based photoelectron system comprises a first substrate; the preparation method comprises the steps of forming an optical waveguide subregion and a modulator subregion on a first region of the first substrate, forming a detector subregion on a second region of the first substrate, forming a dielectric layer on the first substrate having the optical waveguide subregion, the modulator subregion and the detector subregion, and carrying out microwave annealing treatment at least on the first region having the dielectric layer and corresponding to the optical waveguide subregion and the modulator subregion, or at least on the second region having the dielectric layer and corresponding to the detector subregion.
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