Surface-enhanced Raman scattering in graphene deposited on AlxGa1−xN/GaN axial heterostructure nanowires

Abstract The surface-enhanced Raman scattering in graphene deposited on Al x Ga 1−x N/GaN axial heterostructure nanowires was investigated. It was found that the intensity of graphene Raman spectra is not correlated with aluminium content. Analysis of graphene Raman band parameters, Kelvin probe force microscopy, and electroreflectance showed a screening of polarisation charges. Theoretical calculations demonstrated that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of surface-enhanced Raman scattering, hence suggesting a chemical mechanism of enhancement.