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Quenching from highly-excited SiO rotational levels due to H 2 collision
Quenching from highly-excited SiO rotational levels due to H 2 collision
2018
Phillip C. Stancil
Michael Belayneh
Yier Wan
Benhui H. Yang
Keywords:
Collision
Excited state
Molecular physics
Quenching
Materials science
Correction
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