High Reliability Planar InGaAs/InP Photodiodes Made With High Yield by Atmospheric Pressure MOVPE

A high-yield process for making planar InGaAs/InP photodiodes based on metal-organic vapour phase epitaxy (MOVPE) growth at atmospheric pressure has been developed. The process results in very good uniformity and yield and gives high-performance devices of excellent reliability, with a random failure rate of less than 0.3 FITs at 20°C. This reliability performance is easily able to meet the stringent requirements for detectors in submarine systems.