Porous Anodised Silicon for Full Dielectric Isolation: The Development of an n/n+/n Device Route

The n/n+/n route to porous silicon has been used to produce fully dielectrically isolated silicon islands. Results are presented to show that doping of the island with residual n+ material can be avoided and that Lhe silicon is of high crystalline perfection. The technique is shown to avoid the limitations of the original p-n technique and to be extremely promising for SOI Device applications.