InP FinFETs with damage-free and record high-aspect-ratio (45∶1) fins fabricated by metal-assisted chemical etching

Damage-free metal-assisted chemical etching (MacEtch) was used to fabricate InP junctionless FinFETs with ultra-high aspect ratio (∼ 45∶1) fins. For devices with L g = 560 nm, 20 – 32 nm fin width, and 600 nm active fin height, I on /I off ∼ 10 6 , and near-ideal subthreshold swing (70 mV/dec) were achieved.