Terahertz response of field-effect transistors in saturation regime
2011
We report on the broadband terahertz response of InGaAs/GaAs high electron mobility transistors operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain-bias current) and might reach very high values up to 170 V/W. We also develop a phenomenological theory valid both in the Ohmic and in the saturation regimes.
Keywords:
- Condensed matter physics
- Terahertz spectroscopy and technology
- Electron mobility
- Induced high electron mobility transistor
- Terahertz radiation
- Ohmic contact
- Optoelectronics
- Saturation (chemistry)
- Analytical chemistry
- Physics
- High-electron-mobility transistor
- Terahertz time-domain spectroscopy
- Field-effect transistor
- Gallium arsenide
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
23
References
38
Citations
NaN
KQI