3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure

In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a ~ 0.3 nm roughness of the ${5}\times {5}\,\,\mu \text{m}^{{{2}}}$ anode recessed surface. Supported by the flat anode recess surface and optimized anode field plate design. When the anode-to-cathode spacing is 30 $\mu \text{m}$ , the physical breakdown voltage ( ${V}_{\textit {BK}}{)}$ can reach 3.4 kV, with a specific on-resistance ( ${R}_{\textit {on},\textit {sp}}{)}$ of 3.7 $\text{m}\Omega \cdot $ cm2, the power figure of merit ( ${V}_{\textit {BK}}^{{2}}/{R}_{\textit {on},\textit {sp}}{)}$ can be as high as 3.1 GW/cm2, demonstrating its great potential for the application in power electronics.