High mobility CMOS transistors on Si/SiGe heterostructure channels

We have demonstrated high mobility CMOS transistors on Si/SiGe heterostructure channels selectively grown on a Si (100) substrate. Electron and hole mobility is enhanced simultaneously on a single Si/SiGe heterostructure channel by confining electrons in a strained Si channel and holes in a SiGe channel, respectively. Enhanced carrier transports in strained Si or relaxed SiGe channels are confirmed by quantum mechanical simulation. Integration of high mobility CMOS on a single channel is a promising approach to extend Si CMOS technology without the process complexity associated with dual or hybrid channel approaches.