High performance GeO 2 /Ge nMOSFETs with source/drain junctions formed by gas phase doping

We have revealed that the MOVPE-based gas phase doping (GPD) can yield lower arsenic diffusion constant and lower leakage current n + /p junctions in Ge compared to conventional ion implantation doping. Thus, the GPD is quite effective for realizing high performance Ge n-channel MOSFETs. By using the GPD for source/drain (S/D) junction formation, the GeO 2 /Ge nMOSFETs have achieved high electron mobility of 804 cm 2 /Vs with maintaining low junction leakage current of 10 −3 A/cm 2 and high I on /I off ratio of 10 4 .