Deep levels in edge‐defined, film‐fed grown silicon solar cells

Deep level transient spectroscopoy (DLTS) was used for studies of defects in edge‐defined film‐fed grown solar cells. For the first time, specific electronic traps were observed and identified in this polycrystalline silicon material. The DLTS spectra were taken in the extended temperature range 80–450 K, and a number of deep centers were detected. Several dislocation‐ and impurity‐related states were identified at low concentrations in the processed solar cells. Variations in crystal growth conditions were shown to produce a novel high‐temperature peak which exhibited a strong correlation to the bulk lifetime of the solar cell.