On the Relationship Between Carrier Mobility and Velocity in sub-50 nm MOSFETs via Calibrated Monte Carlo Simulation

Subsequent to accurate 2 D inverse m odeling in the regime s ensitive to electrostatics o f industrial sub-50 nm NMOSFETs, a 2D full-band Monte Carlo device simulator was calibrated in the regime sensitive to transport parameters. The relationship between electron mobility and high-electric-field velocity at the maximum of the source-channel potential energy barrier was investigated. The results show a strong correlation, as was demonstrated previously experimentally. Moreover, further proof is provided that the velocity at which carriers are injected from the source region in modern NMOSFET’s is only about half of the limiting thermal velocity.