Deep-trap discharge in semiconductors in response to concurrent heat and light flows

We have numerically solved differential equations describing the detrapping kinetics of impurity traps during heating (thermally stimulated conductivity) under illumination (induced impurity photoconductivity) with arbitrary trap parameters. An algorithm has been formulated for determining parameters of impurity traps in semiconductors (ionization energy, photon capture cross section, and concentration) from isothermal detrapping curves measured under illumination.