Frequency dependence of the conductivity and dielectric constant of La2CuO4+y near the insulator-metal transition

Abstract Measurement are reported of the conductivity and the dielectric constant (ɛ 1 ) at frequencies (ω) up to 20 MHz and magnetic fields up to 15 T for a single crystal of La 2 CuO 4+y with y varied in the range 0.001 – 0.01. The frequency dependence of the conductivity at low temperatures follows a power law, which is typical of conventional doped semiconductors. ɛ 1 at high ω is independent of ω and grows as the insulator to metal transition (IMT) is approached, but only for the electric field in the CuO 2 layers, indicating that the IMT is two-dimensional. For the highest oxygen concentration, this excess ɛ 1 was reduced by a factor of 2 at a magnetic field of 15 T perpendicular to the CuO 2 layers.