GEANT4 simulation of electron energy deposition in extended media

Abstract The present work demonstrates that GEANT4 yields a consistent description of electron transport processes in semi-infinite homogeneous and heterogeneous extended media. This comparison covers the e − energy deposition profiles in a range of elements from aluminum to tantalum through molybdenum at source energies from 0.3 to 1.0 MeV and at incident angles from 0° to 60°. The good agreement between simulation results and data confirms that the Monte Carlo used code is capable of accurate electron beam energy deposition calculation even under such conditions.