Semiconductor device and fabrication method thereof and method for forming contact hole

The semiconductor device and its manufacturing method and a contact-hole forming method is provided. The semiconductor manufacturing method is narrow to form a second active region defined by the device isolation film and the isolation film on a substrate, and forming an insulating film on the substrate on the insulating layer, than each of the first gap and the first gap at intervals to form a plurality of pillar (pillar) masks that are spaced apart from each other, and forming a spacer on the plurality of pillar mask, to remove a portion of the spacer, the first between the plurality of pillar mask spaced with a second spacing to form a mask bridge, and by etching the insulating film through the plurality of filler mask and the mask bridge, may include forming a contact hole exposing the active region.