CHARACTERISTIC ANALYSIS OF SIC MOSFET AND RESEARCH ON DRIVE CIRCUIT FOR SIC MOSFET

The differences on material properties of silicon carbide (SiC) and silicon (Si) are compared in this paper. The electrical characteristics of MOSFET based on SiC and Si are also analyzed, and switch trajectory is obtained by the simulation. A model is proposed to analyze the influence of drive resistance during switching process. Then, the drive circuits suitable for typical circuits such as single-switch power circuit, bridge power circuit and dual-switch forward circuit adopting SiC MOSFET are obtained. Their advantages and disadvantages are compared by simulation. Some key tips about layout design of SiC MOSFET drive circuit are also proposed .