Low-power up-conversion folded CMOS mixer for 2–12 GHz ultra-wideband applications

This study presents an ultra-wideband up-conversion mixer chip that operates within the frequency range of 2–12 GHz using TSMC 0.18 μm complementary metal oxide semiconductor (CMOS) technology. The architecture is based on that of a Gilbert cell mixer. The design of the transconductance stage is based on an inverting amplifier. Two series resonant inductors are used to increase the conversion gain of the mixer, and a transformer that consists of two self-made inductors reduces the spatial requirement of the chip. This up-mixer achieves a 12.48 dB conversion gain and features an excellent gain flatness value of ±1.2 dB. The local oscillator (LO)-to-radio-frequency isolation is 44–20 dB, the input third-order intercept point (IIP3) is −6.8 to −8 dBm and the DC power consumption is 5.084 mW for a supply voltage of 1 V. The total size of the chip for the up-mixer is 1.2 × 1.2 mm2, including the pad frames.