193-nm negative resist based on acid-catalyzed elimination of polar molecules

Development of 193-nm negative resists that meet the stringent performance requirements of sub-100 nm resolution with conventional 0.26 N TMAH developer has proven to be a significant challenge. Most of the systems that are currently under development are based on cross-linking mechanisms. They commonly suffer from image distortion caused by micro-bridging. An alternative approach is to look at polarity switch mechanisms. We have investigated the acid-catalyzed elimination of polar molecules as one such mechanism which may provide a pathway to develop negative resists that do not suffer from micro-bridging.