A study of intervalley scattering in n-Si by stress-dependent longitudinal magnetophonon resonance

Abstract The stress dependence of the amplitude and position of the magnetophonon extrema of n -Si are employed to distinguish the f - and g -type intervalley scattering series. The sign of the extrema of the g -T.A. series changes at a critical stress. The measurements locate the conduction band minima at (0.85 ± 0.01, 0, 0) in the reduced Brillouin zone.