A NEW APPROACH OF THE BOX METHOD ADAPTED TO ANY CONVEX POLYGONAL MESH

The main discretisation methods used today for semiconductor device simulations are finite elements, finite differences and the box method. Each of them has disadvantages. We propose a new box method, which avoids the disadvantage of finite elements and allows the flexebillity of geometrical description of this method. This new method can be easily applied to two or three dimensional problems, even if the examples we present are two dimensional test problems.