Design, Simulation and Analysis of a Slotted RF MEMS Switch

In this paper, a capacitive RF MEMS switch working in shunt configuration is designed and optimized using FEM software. An electrostatically actuated fixed–fixed type shunt switch is optimised for low pull-in voltage. The thickness of the membrane and the actuating gap is optimized for low pull-in voltage and high capacitance ratio. The effect of different meanders, perforations, slits and device dimensions were also analyzed. The final device has a pull-in voltage of 3.74 V, down capacitance of 28.6 pF, up capacitance of 160 fF and a capacitance ratio of 178.125. The switch shows peak isolation of 43.3 dB at 39.7 GHz and isolation better than 30 dB over the entire Ka band.