Thin Film Barrier Layers with Increased Performance and Reduced Long-Term Degradation in SOFCs

This work presents the results from the optimisation of a CGO barrier layer deposited by PLD. The layer annealing temperature was first defined and led to the fabrication of large-area cells (80 cm2) that were aged for 14000 h in a stack operated in SOFC mode. Low quantity of SrZrO3 were detected proving the barrier layer good blocking ability. Moreover, no evidences of barrier layer degradation could be observed by the post-mortem analysis.At the light of those promising results, the thickness of this PLD barrier layer was adjusted by finding the optimal combination between the protective role of the diffusion barrier layer, a good performance and the reduction of the PLD deposition time. It is shown that the barrier layer thickness has no impact on the electrochemical performance which would allow the use of thinner layers corresponding to a drastic reduction of its deposition time.