A Simple Technique for Generation Lifetime in SOI-Substrate Material Using the Principle

A charge-time measurement, utilizing the charge- centroid principle, is presented for the rapid assessment of silicon-on-insulator (SOI) substrates. The technique is applicable to technologies which involve the formation of a buried dielec- tric layer with a thin-film body region wherein devices are formed. The measurement is routine and only requires a simple two-terminal SO1 capacitor from which the quality of the body region, as indicated by the lifetime, can be assessed prior to device fabrication.