K-band diamond MESFETs for RFIC technology

Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (P out =1.5 W/mm) and high frequency (and f MAX =35 GHz) performances have been obtained.